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Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy
Brubaker, Matt D., Levin, Igor, Davydov, Albert V., Rourke, Devin M., Sanford, Norman A., Bright, Victor M., Bertness, Kris A.Volume:
110
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3633522
File:
PDF, 2.23 MB
english, 2011