Doping profile control and two-dimensional electron gas...

Journal of Applied Physics 1994 Vol. 76; Iss. 11

Doping profile control and two-dimensional electron gas formation by Si diffusion into III-V compounds

Matsushita, Shigeharu, Terada, Satoshi, Fujii, Emi, Inoue, Daijiro, Matsumura, Kohji, Harada, Yasoo
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Volume:
76
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.358017
File:
PDF, 832 KB
english, 1994
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