Inverse modeling of impact ionization rate through...

Inverse modeling of impact ionization rate through comparison of Monte Carlo simulation of Si metal-oxide-semiconductor device characteristics and experimental results

Imanaga, Syunji, Hane, Kunio, Hayafuji, Yoshinori
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Volume:
74
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.354157
File:
PDF, 1.13 MB
english, 1993
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