Inverse modeling of impact ionization rate through comparison of Monte Carlo simulation of Si metal-oxide-semiconductor device characteristics and experimental results
Imanaga, Syunji, Hane, Kunio, Hayafuji, YoshinoriVolume:
74
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.354157
File:
PDF, 1.13 MB
english, 1993