Evaluation of plasma charging damage during polysilicon gate etching process in a decoupled plasma source reactor
Ma, ShawmingVolume:
16
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.581165
Date:
May, 1998
File:
PDF, 882 KB
english, 1998