730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells
Al-Muhanna, A., Wade, J. K., Mawst, L. J., Fu, R. J.Volume:
72
Year:
1998
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.120831
File:
PDF, 316 KB
english, 1998