Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature
Um, Jae Gwang, Mativenga, Mallory, Migliorato, Piero, Jang, JinVolume:
115
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4870458
Date:
April, 2014
File:
PDF, 2.05 MB
english, 2014