![](/img/cover-not-exists.png)
Photoluminescence and reflection high-energy electron diffraction study of GaAs/AlxGa1−xAs(100) single quantum wells grown via molecular beam epitaxy employing two forms (As2 and As4) of arsenic
Kim, J. Y., Bassi, D., Ellis, J., Jostad, L.Volume:
57
Year:
1990
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.103885
File:
PDF, 549 KB
english, 1990