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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Design of high performance PFETs with strained si channel and laser anneal
Luo, Z., Chong, Y.F., Kim, J., Rovedo, N., Greene, B., Panda, S., Sato, T., Holt, J., Chidambarrao, D., Li, J., Davis, R., Madan, A., Turansky, A., Gluschenkov, O., Lindsay, R., Ajmera, A., Lee, J., MYear:
2005
Language:
english
DOI:
10.1109/iedm.2005.1609388
File:
PDF, 1.71 MB
english, 2005