Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2011 Vol. 29; Iss. 3
High In content In[sub x]Ga[sub 1−x]N grown by energetic neutral atom beam lithography and epitaxy under slightly N-rich conditions
Williamson, Todd L., Williams, Joshua J., Hubbard, Jonathan C. D., Hoffbauer, Mark A.Volume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3581870
File:
PDF, 698 KB
english, 2011