Diameter dependent transport properties of gallium nitride nanowire field effect transistors
Motayed, Abhishek, Vaudin, Mark, Davydov, Albert V., Melngailis, John, He, Maoqi, Mohammad, S. N.Volume:
90
Year:
2007
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2434153
File:
PDF, 424 KB
english, 2007