Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2010 Vol. 28; Iss. 3
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Controlled growth of (100) or (111) CdTe epitaxial layers on (100) GaAs by molecular beam epitaxy and study of their electron spin relaxation times
Zhang, Qiang, Li, Yunpu, Pagliero, Daniela, Charles, William, Shen, Aidong, Meriles, Carlos A., Tamargo, Maria C.Volume:
28
Year:
2010
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3336144
File:
PDF, 487 KB
english, 2010