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[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Hot-carrier-induced gate capacitance variation and its impact on DRAM circuit functionality
Yoonjong Huh,, Hyeokjae Lee,, Jae-Gyung Ahn,, Dooyoung Yang,, Yungkwon Sung,Year:
1995
Language:
english
DOI:
10.1109/iedm.1995.497176
File:
PDF, 381 KB
english, 1995