Ultrathin InAlN/GaN heterostructures on sapphire for high...

Journal of Applied Physics 2013 Vol. 113; Iss. 21

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Lugani, Lorenzo, Carlin, Jean-François, Py, Marcel A., Martin, Denis, Rossi, Francesca, Salviati, Giancarlo, Herfurth, Patrick, Kohn, Erhard, Bläsing, Jürgen, Krost, Alois, Grandjean, Nicolas
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Volume:
113
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4808260
File:
PDF, 1.61 MB
english, 2013
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