Strain relaxation in InAs∕InGaAs quantum dots investigated...

Applied Physics Letters 2005 Vol. 87; Iss. 14

Strain relaxation in InAs∕InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling

Chen, J. F., Hsiao, R. S., Chen, Y. P., Wang, J. S., Chi, J. Y.
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Volume:
87
Year:
2005
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2081132
File:
PDF, 264 KB
english, 2005
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