Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes
Caldwell, J. D., Stahlbush, R. E., Imhoff, E. A., Hobart, K. D., Tadjer, M. J., Zhang, Q., Agarwal, A.Volume:
106
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3194323
File:
PDF, 896 KB
english, 2009