Introduction of Si∕SiO[sub 2] interface states by annealing...

Introduction of Si∕SiO[sub 2] interface states by annealing Ge-implanted films

Marstein, E. S., Gunnæs, A. E., Olsen, A., Finstad, T. G., Turan, R., Serincan, U.

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Volume:

Year:

2004

Language:

english

Journal:

Journal of Applied Physics

DOI:

10.1063/1.1790579

File:

PDF, 391 KB

english, 2004

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