a-plane GaN hydride vapor phase epitaxy on a-plane GaN...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2010 Vol. 28; Iss. 5

a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers

Polyakov, A. Y., Markov, A. V., Mezhennyi, M. V., Donskov, A. A., Malakhov, S. S., Govorkov, A. V., Kozlova, Yu. P., Pavlov, V. F., Smirnov, N. B., Yugova, T. G., Lee, I.-H., Han, J., Sun, Q., Pearton
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Volume:
28
Year:
2010
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3491187
File:
PDF, 489 KB
english, 2010
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