Structure disorder degree of polysilicon thin films grown...

Journal of Applied Physics 2013 Vol. 114; Iss. 18

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

Wang, Quan, Zhang, Yanmin, Hu, Ran, Ge, Daohan, Ren, Naifei
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Volume:
114
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4829667
File:
PDF, 1.27 MB
english, 2013
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