Gettering effects in BF2-implanted Si(100) by ion-beam...

Journal of Applied Physics 1995 Vol. 77; Iss. 10

Gettering effects in BF2-implanted Si(100) by ion-beam defect engineering

Zhao, Qing-Tai, Wang, Zhong-Lie, Cao, Yongming, Xu, Tian-Bing, Zhu, Pei-Ran
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Volume:
77
Year:
1995
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.359311
File:
PDF, 1.01 MB
english, 1995
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