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InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers
Blake, Adam H., Caselli, Derek, Durot, Christopher, Mueller, Jason, Parra, Eduardo, Gilgen, Joseph, Boley, Allison, Smith, David J., Tsong, Ignatius S. T., Roberts, John C., Piner, Edwin, Linthicum, KVolume:
111
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3684557
File:
PDF, 3.21 MB
english, 2012