[IEEE 2006 International Electron Devices Meeting - San...

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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Floating Islands and Thick Bottom Oxide Trench Gate MOSFET (FITMOS) with Passive Hole Gate -60V Ultra Low On-Resistance Novel MOSFET-

Takaya, Hidefumi, Miyagi, Kyosuke, Hamada, Kimimori
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Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.346934
File:
PDF, 362 KB
english, 2006
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