[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - Feasibility of using W/TiN as metal gate for conventional 0.13 μm CMOS technology and beyond
Hu, J.C., Yang, H., Kraft, R., Rotondaro, A.L.P., Hattangady, S., Lee, W.W., Chapman, R.A., Chao, C.-P., Chatterjee, A., Hanratty, M., Rodder, M., Chen, I.-C.Year:
1997
Language:
english
DOI:
10.1109/iedm.1997.650508
File:
PDF, 443 KB
english, 1997