Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 $^{\circ}\hbox{C}$ on a Flexible Substrate
Lee, Dong Hee, Nomura, Kenji, Kamiya, Toshio, Hosono, HideoVolume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2011.2167123
Date:
December, 2011
File:
PDF, 344 KB
english, 2011