Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope
Miller, E. J., Schaadt, D. M., Yu, E. T., Poblenz, C., Elsass, C., Speck, J. S.Volume:
91
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1478793
File:
PDF, 574 KB
english, 2002