Peaked structure appearing in the field effect mobility of silicon mos devices at temperatures above 20 K
Stradling, R. A., Tidey, R. J.Volume:
5
Language:
english
Journal:
C R C Critical Reviews in Solid State Sciences
DOI:
10.1080/10408437508243496
Date:
October, 1975
File:
PDF, 608 KB
english, 1975