Impact of the transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness
Kol’dyaev, V. I., Clerix, A., Deferm, L., Van Overstraeten, R.Volume:
83
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.366948
File:
PDF, 406 KB
english, 1998