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Analysis of temperature dependence of Hall mobility of nondoped and nitrogen-doped β-SiC single crystals grown by chemical vapor deposition
Suzuki, Akira, Ogura, Atsuko, Furukawa, Katsuki, Fujii, Yoshihisa, Shigeta, Mitsuhiro, Nakajima, ShigeoVolume:
64
Year:
1988
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.341591
File:
PDF, 711 KB
english, 1988