[IEEE 2014 IEEE 26th International Symposium on Power...

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[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

Moens, P., Liu, C., Banerjee, A., Vanmeerbeek, P., Coppens, P., Ziad, H., Constant, A., Li, Z., De Vleeschouwer, H., Roig-Guitart, J., Gassot, P., Bauwens, F., De Backer, E., Padmanabhan, B., Salih, A
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Year:
2014
Language:
english
DOI:
10.1109/ispsd.2014.6856054
File:
PDF, 1.09 MB
english, 2014
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