[IEEE 2008 9th International Symposium of Quality of Electronic Design (ISQED) - San Jose, CA, USA (2008.03.17-2008.03.19)] 9th International Symposium on Quality Electronic Design (isqed 2008) - Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes

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