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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - A new E(E)PROM technology with a TiSi/sub 2/ control gate
Vollebregt, F., Cuppens, R., Druyts, F., Lemmen, G., Verberne, F., Solo, J.Year:
1989
Language:
english
DOI:
10.1109/iedm.1989.74354
File:
PDF, 216 KB
english, 1989