Suppress Dynamic Hot-Carrier Induced Degradation in...

IEEE Electron Device Letters 2014 / 5 Vol. 35; Iss. 5

Suppress Dynamic Hot-Carrier Induced Degradation in Polycrystalline Si Thin-Film Transistors by Using a Substrate Terminal

Huaisheng Wang,, Mingxiang Wang,, Dongli Zhang,
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2014.2308987
Date:
May, 2014
File:
PDF, 533 KB
english, 2014
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