[IEEE IEEE InternationalElectron Devices Meeting, 2005....

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[IEEE IEEE InternationalElectron...

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Robust multi-bit programmable flash memory using a resonant tunnel barrier

Shieun Kim,, Seung Jae Baik,, Zongliang Huo,, Young-Jin Noh,, Chulsung Kim,, Jeong Hee Han,, In-Seok Yeo,, U-In Chung,, Joo Tae Moon,, Byung-Il Ryu,

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Year:

2005

Language:

english

DOI:

10.1109/iedm.2005.1609493

File:

PDF, 787 KB

english, 2005

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