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[IEEE 2005 International Conference On Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2005.09.3-2005.09.3)] 2005 International Conference On Simulation of Semiconductor Processes and Devices - Simulation of Drain Current Reduction Caused by Process-Induced Stress
Uchida, T., Takashino, H., Tanizawa, M., Okagaki, T., Ishikawa, K., Eimori, T., Ohji, Y.Year:
2005
Language:
english
DOI:
10.1109/sispad.2005.201507
File:
PDF, 1.69 MB
english, 2005