Source and Drain Series Resistance Reduction for N-Channel...

IEEE Electron Device Letters 2008 / 07 Vol. 29; Iss. 7

Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During Silicidation

Wong, Hoong-Shing, Koh, Alvin Tian-Yi, Chin, Hock-Chun, Chan, Lap, Samudra, Ganesh, Yeo, Yee-Chia
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.923712
Date:
July, 2008
File:
PDF, 382 KB
english, 2008
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