Drain current model of double-gate MOSFETs considering both electrons and holes
Zhu, Zhaomin, Yan, Dawei, Xu, Guoqing, Gu, XiaofengVolume:
9
Language:
english
Journal:
IEEJ Transactions on Electrical and Electronic Engineering
DOI:
10.1002/tee.21965
Date:
May, 2014
File:
PDF, 494 KB
english, 2014