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[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Extremely Low Voltage and High Speed Deep Trapping MONOS Memory with Good Retention
China, Albert, Laia, C.H., Yanga, H.J., Chenb, W.J., Wuc, Y.H., Hwang, H.l.Year:
2006
Language:
english
DOI:
10.1109/icsict.2006.306474
File:
PDF, 129 KB
english, 2006