The TEOS CVD oxide deposited on phosphorus in situ doped...

IEEE Electron Device Letters 1997 / 11 Vol. 18; Iss. 11

The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

Chyuan Haur Kao,, Chao Sung Lai,, Chung Len Lee,
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Volume:
18
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.641434
Date:
November, 1997
File:
PDF, 88 KB
english, 1997
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