Capacitorless 1T Memory Cells Using Channel Traps at Grain...

IEEE Electron Device Letters 2010 / 10 Vol. 31; Iss. 10

Capacitorless 1T Memory Cells Using Channel Traps at Grain Boundaries

Chen, Yen-Ting, Sun, Hung-Chang, Huang, Ching-Fang, Wu, Ting-Yun, Liu, C. W., Hsu, Yuan-Jun, Chen, Jim-Shone
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2057406
Date:
October, 2010
File:
PDF, 395 KB
english, 2010
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