Achieving Conduction Band-Edge Schottky Barrier Height for...

IEEE Electron Device Letters 2008 / 04 Vol. 29; Iss. 4

Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

Rinus Tek-Po Lee,, Tsung-Yang Liow,, Kian-Ming Tan,, Lim, A.E.-J., Koh, A.T.-Y., Ming Zhu,, Guo-Qiang Lo,, Samudra, G.S., Dong Zhi Chi,, Yee-Chia Yeo,
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.917813
Date:
April, 2008
File:
PDF, 397 KB
english, 2008
Conversion to is in progress
Conversion to is failed