Self-Aligned and Non-Self-Aligned Contact Metallization in...

IEEE Transactions on Electron Devices 2014 / 03 Vol. 61; Iss. 3

Self-Aligned and Non-Self-Aligned Contact Metallization in InGaAs Metal–Oxide-Semiconductor Field-Effect Transistors: A Simulation Study

Kong, Eugene Y.-J., Yeo, Yee-Chia
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2013.2297737
Date:
March, 2014
File:
PDF, 1.56 MB
english, 2014
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