[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - High-Performance FinFET with Dopant-Segregated Schottky Source/Drain
Kaneko, A., Yagishita, A., Yahashi, K., Kubota, T., Omura, M., Matsuo, K., Mizushima, I., Okano, K., Kawasaki, H., Izumida, T., Kanemura, T., Aoki, N., Kinoshita, A., Koga, J., Inaba, S., Ishimaru, K.Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.346926
File:
PDF, 1.06 MB
english, 2006