[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Correlation between channel mobility improvements and negative Vth shifts in III–V MISFETs: Dipole fluctuation as new scattering mechanism
Urabe, Yuji, Miyata, Noriyuki, Ishii, Hiroyuki, Itatani, Taro, Maeda, Tatsuro, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Yokoyama, Masafumi, Taoka, Noriyuki, Takenaka, MitsurYear:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703310
File:
PDF, 1.67 MB
english, 2010