[IEEE 2010 IEEE International Electron Devices Meeting...

  • Main
  • [IEEE 2010 IEEE International Electron...

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Correlation between channel mobility improvements and negative Vth shifts in III–V MISFETs: Dipole fluctuation as new scattering mechanism

Urabe, Yuji, Miyata, Noriyuki, Ishii, Hiroyuki, Itatani, Taro, Maeda, Tatsuro, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Yokoyama, Masafumi, Taoka, Noriyuki, Takenaka, Mitsur
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703310
File:
PDF, 1.67 MB
english, 2010
Conversion to is in progress
Conversion to is failed