Investigation of Gate Etch Damage at Metal/High-$k$ Gate...

IEEE Electron Device Letters 2011 / 04 Vol. 32; Iss. 4

Investigation of Gate Etch Damage at Metal/High-$k$ Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current

Cho, Heung-Jae, Son, Younghwan, Oh, Byoungchan, Jang, Seunghyun, Lee, Jong-Ho, Park, Byung-Gook, Shin, Hyungcheol
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2011.2106108
Date:
April, 2011
File:
PDF, 417 KB
english, 2011
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