1000-V, 30-A 4H-SiC BJTs with high current gain

IEEE Electron Device Letters 2005 / 03 Vol. 26; Iss. 3

1000-V, 30-A 4H-SiC BJTs with high current gain

Krishnaswami, S., Agarwal, A., Sei-Hyung Ryu,, Capell, C., Richmond, J., Palmour, J., Balachandran, S., Chow, T.P., Bayne, S., Geil, B., Jones, K., Scozzie, C.
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Volume:
26
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2004.842731
Date:
March, 2005
File:
PDF, 239 KB
english, 2005
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