Improved Memory Characteristics of Ge Nanocrystals Using a...

Electrochemical and Solid-State Letters 2008 Vol. 11; Iss. 6

Improved Memory Characteristics of Ge Nanocrystals Using a LaAlO[sub 3] Buffer Layer

Choi, Hyejung, Chang, Man, Jo, Minseok, Jung, Seung-Jae, Hwang, Hyunsang
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Volume:
11
Year:
2008
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.2901545
File:
PDF, 571 KB
english, 2008
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