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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Simulation of enhanced hole ballistic velocity in asymmetrically strained Germanium nanowire trigate p-MOSFETs
Teherani, James T., Chern, Winston, Antoniadis, Dimitri A., Hoyt, Judy L.Year:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724737
File:
PDF, 1.58 MB
english, 2013