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[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - A Transmission Electron Microscopy Investigation of GaN grown on Patterned, Step-Free 4H-SiC Mesas
Bassim, N.D., Twigg, M.E., Mastro, M.A., Neudeck, P., Eddy, C.R., Henry, R.L., Holm, R.N., Powell, J.A., Trunek, A.J.Year:
2005
Language:
english
DOI:
10.1109/isdrs.2005.1596105
File:
PDF, 396 KB
english, 2005