A New Two-Dimensional Analytical Threshold Voltage Model...

Japanese Journal of Applied Physics 2012 / 4 Vol. 51

A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Wang, Hsin-Kai, Wu, Sean, Chiang, Te-Kuang, Lee, Maw-Shung
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.51.054301
Date:
April, 2012
File:
PDF, 607 KB
english, 2012
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