Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-,...

Japanese Journal of Applied Physics 1997 / 6 Vol. 36; Iss. Part 2, No

Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates

Iwata, Kakuya, Asahi, Hajime, Asami, Kumiko, Kuroiwa, Reiko, Gonda, Shun-ichi
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.36.l661
Date:
June, 1997
File:
PDF, 1.03 MB
1997
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