On the Crossing-Point of 4H-SiC Power Diodes...

IEEE Electron Device Letters 2014 / 02 Vol. 35; Iss. 2

On the Crossing-Point of 4H-SiC Power Diodes Characteristics

Di Benedetto, Luigi, Licciardo, Gian Domenico, Nipoti, Roberta, Bellone, Salvatore
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2294078
Date:
February, 2014
File:
PDF, 847 KB
english, 2014
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